{
  "id": "1902.10145",
  "version": "v1",
  "published": "2019-02-26T19:00:01.000Z",
  "updated": "2019-02-26T19:00:01.000Z",
  "title": "Correlations between Optical Properties and Voronoi-Cell Area of Quantum Dots",
  "authors": [
    "Matthias C. Löbl",
    "Liang Zhai",
    "Jan-Philipp Jahn",
    "Julian Ritzmann",
    "Yongheng Huo",
    "Andreas D. Wieck",
    "Oliver G. Schmidt",
    "Arne Ludwig",
    "Armando Rastelli",
    "Richard J. Warburton"
  ],
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "Semiconductor quantum dots (QDs) have been established as excellent photon emitters during the last decade. A QD can generate highly indistinguishable single-photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD optical properties is essential. Understanding the connection between the optical properties of a QD and the growth process is therefore important. Here, we show for GaAs QDs, grown by infilling droplet-etched nano-holes, that the emission wavelength, neutral-to-charged exciton splitting, and diamagnetic shift are strongly correlated with the capture zone-area, an important concept from nucleation theory. Our analysis relies on photoluminescence-imaging and post-experiment determination of the QD-positions and the associated Voronoi-cells. The experiments show that the capture-zone model applies to the growth of this system even in the limit of a low QD-density in which Al-atoms diffuse over micrometer distances. The strong correlations between the various QD parameters facilitate preselection of QDs for applications with specific requirements on the QD properties; they also suggest that a narrowed QD distribution will result if QD growth on a regular lattice can be achieved.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2019-02-26T19:00:01.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "voronoi-cell area",
      "correlations",
      "qd parameters facilitate preselection",
      "semiconductor quantum dots",
      "capture-zone model applies"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}