{
  "id": "1810.06174",
  "version": "v1",
  "published": "2018-10-15T04:04:32.000Z",
  "updated": "2018-10-15T04:04:32.000Z",
  "title": "Spin splitting of surface states in HgTe quantum wells",
  "authors": [
    "A. A. Dobretsova",
    "Z. D. Kvon",
    "S. S. Krishtopenko",
    "N. N. Mikhailov",
    "S. A. Dvoretsky"
  ],
  "comment": "7 pages, 7 figures",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We report on beating appearance in Shubnikov-de Haas oscillations in conduction band of 18-22nm HgTe quantum wells under applied top-gate voltage. Analysis of the beatings reveals two electron concentrations at the Fermi level arising due to Rashba-like spin splitting of the first conduction subband H1. The difference dN_s in two concentrations as a function of the gate voltage is qualitatively explained by a proposed toy electrostatic model involving the surface states localized at quantum well interfaces. Experimental values of dN_s are also in a good quantitative agreement with self-consistent calculations of Poisson and Schrodinger equations with eight-band kp Hamiltonian. Our results clearly demonstrate that the large spin splitting of the first conduction subband is caused by surface nature of $H1$ states hybridized with the heavy-hole band.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2018-10-15T04:04:32.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "hgte quantum wells",
      "surface states",
      "spin splitting",
      "first conduction subband h1",
      "toy electrostatic model"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 7,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}