{
  "id": "1810.03838",
  "version": "v1",
  "published": "2018-10-09T07:48:49.000Z",
  "updated": "2018-10-09T07:48:49.000Z",
  "title": "Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier",
  "authors": [
    "Muftah Al-Mahdawi",
    "Mohamed Belmoubarik",
    "Masao Obata",
    "Daiki Yoshikawa",
    "Hideyuki Sato",
    "Tomohiro Nozaki",
    "Tatsuki Oda",
    "Masashi Sahashi"
  ],
  "comment": "16 pages, 5 figures",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "The electric control of magnetic anisotropy has important applications for nonvolatile memory and information processing. By first-principles calculations, we show a large nonvolatile control of magnetic anisotropy in ferromagnetic/ferroelectric CoPt/ZnO interface. Using the switched electric polarization of ZnO, the density-of-states and magnetic anisotropy at the CoPt surface show a large change. Due to a strong Co/Pt orbitals hybridization and a large spin-orbit coupling, a large control of magnetic anisotropy was found. We experimentally measured the change of effective anisotropy by tunneling resistance measurements in CoPt/Mg-doped ZnO/Co junctions. Additionally, we corroborate the origin of the control of magnetic anisotropy by observations on tunneling anisotropic magnetoresistance.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2018-10-09T07:48:49.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "magnetic anisotropy",
      "large nonvolatile control",
      "ferroelectric zno-based tunneling barrier",
      "strong co/pt orbitals hybridization",
      "ferromagnetic/ferroelectric copt/zno interface"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 16,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}