{
  "id": "1809.06230",
  "version": "v1",
  "published": "2018-09-17T14:23:45.000Z",
  "updated": "2018-09-17T14:23:45.000Z",
  "title": "Spin-Orbit Interaction Induced in Graphene by Transition-Metal Dichalcogenides",
  "authors": [
    "T. Wakamura",
    "F. Reale",
    "P. Palczynski",
    "M. Q. Zhao",
    "A. T. C. Johnson",
    "S. Guéron",
    "C. Mattevi",
    "A. Ouerghi",
    "H. Bouchiat"
  ],
  "comment": "12 pages, 8 figures and 3 tables",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We report a systematic study on strong enhancement of spin-orbit interaction (SOI) in graphene driven by transition-metal dichalcogenides (TMDs). Low temperature magnetotoransport measurements of graphene proximitized to different TMDs (monolayer and bulk WSe$_2$, WS$_2$ and monolayer MoS$_2$) all exhibit weak antilocalization peaks, a signature of strong SOI induced in graphene. The amplitudes of the induced SOI are different for different materials and thickness, and we find that monolayer WSe$_2$ and WS$_2$ can induce much stronger SOI than bulk ones and also monolayer MoS$_2$. The estimated spin-orbit (SO) scattering strength for the former reaches $\\sim$ 10 meV whereas for the latter it is around 1 meV or less. We also discuss the symmetry and type of the induced SOI in detail, especially focusing on the identification of intrinsic and valley-Zeeman (VZ) SOI via the dominant spin relaxation mechanism. Our findings offer insight on the possible realization of the quantum spin Hall (QSH) state in graphene.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2018-09-17T14:23:45.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "transition-metal dichalcogenides",
      "spin-orbit interaction",
      "dominant spin relaxation mechanism",
      "monolayer mos",
      "low temperature magnetotoransport measurements"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 12,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}