{
  "id": "1807.02539",
  "version": "v1",
  "published": "2018-07-06T18:33:59.000Z",
  "updated": "2018-07-06T18:33:59.000Z",
  "title": "Substitutional mechanism for growth of hexagonal boron nitride on epitaxial graphene",
  "authors": [
    "Patrick C. Mende",
    "Jun Li",
    "Randall M. Feenstra"
  ],
  "comment": "9 pages (with 3 figures), plus 9 pages of Supplementary Material (with 7 figures)",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Monolayer-thick hexagonal boron nitride (h-BN) is grown on graphene on SiC(0001), by exposure of the graphene to borazine, (BH)3(NH)3, at 1100 C. The h-BN films form ~2-micrometer size grains with a preferred orientation of 30 degrees relative to the surface graphene. Low-energy electron microscopy is employed to provide definitive signatures of the number and composition of two-dimensional (2D) planes across the surface. These grains are found to form by substitution for the surface graphene, with the C atoms produced by this substitution then being incorporated below the h-BN (at the interface between the existing graphene and the SiC) to form a new graphene plane.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2018-07-06T18:33:59.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "epitaxial graphene",
      "substitutional mechanism",
      "monolayer-thick hexagonal boron nitride",
      "surface graphene",
      "low-energy electron microscopy"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 9,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}