{ "id": "1805.05644", "version": "v1", "published": "2018-05-15T08:51:39.000Z", "updated": "2018-05-15T08:51:39.000Z", "title": "Uniform doping of graphene close to the charge neutrality point by polymer-assisted spontaneous assembly of molecular dopants", "authors": [ "Hans He", "Kyung Ho Kim", "Andrey Danilov", "Domenico Montemurro", "Liyang Yu", "Yung Woo Park", "Floriana Lombardi", "Thilo Bauch", "Kasper Moth-Poulsen", "Tihomir Iakimov", "Rositsa Yakimova", "Per Malmberg", "Christian Müller", "Sergey Kubatkin", "Samuel Lara-Avila" ], "categories": [ "cond-mat.mes-hall" ], "abstract": "Tuning the charge carrier density of two-dimensional (2D) materials by incorporating dopants into the crystal lattice is a challenging task. An attractive alternative is the surface transfer doping by adsorption of molecules on 2D crystals, which can lead to ordered molecular arrays. However, such systems, demonstrated in ultra-high vacuum conditions (UHV), are often unstable in ambient conditions. Here we show that air-stable doping of epitaxial graphene on SiC - achieved by spin-coating deposition of 2,3,5,6-tetrafluoro-tetracyano-quino-dimethane (F4TCNQ) incorporated in poly (methyl-methacrylate) - proceeds via the spontaneous accumulation of dopants at the graphene-polymer interface and by the formation of a charge-transfer complex that yields low-disorder, charge-neutral graphene with carrier mobilities ~70,000 cm2/Vs at cryogenic temperatures. The assembly of dopants on 2D materials assisted by a polymer matrix, demonstrated by spin coating wafer-scale substrates in ambient conditions, opens up a scalable technological route towards expanding the functionality of 2D materials.", "revisions": [ { "version": "v1", "updated": "2018-05-15T08:51:39.000Z" } ], "analyses": { "keywords": [ "charge neutrality point", "graphene close", "polymer-assisted spontaneous assembly", "molecular dopants", "uniform doping" ], "note": { "typesetting": "TeX", "pages": 0, "language": "en", "license": "arXiv", "status": "editable" } } }