{ "id": "1804.09297", "version": "v1", "published": "2018-04-25T00:18:10.000Z", "updated": "2018-04-25T00:18:10.000Z", "title": "High-Field Magnetoresistance of Organic Semiconductors", "authors": [ "G. Joshi", "M. Y. Teferi", "S. Jamali", "M. Groesbeck", "J. van Tol", "R. McLaughlin", "Z. V. Vardeny", "J. M. Lupton", "H. Malissa", "C. Boehme" ], "comment": "12 pages, 3 figures", "categories": [ "cond-mat.mes-hall", "cond-mat.mtrl-sci" ], "abstract": "The magneto-electronic field effects in organic semiconductors at high magnetic fields are described by field-dependent mixing between singlet and triplet states of weakly bound charge carrier pairs due to small differences in their Land\\'e g-factors that arise from the weak spin-orbit coupling in the material. In this work, we corroborate theoretical models for the high-field magnetoresistance of organic semiconductors, in particular of diodes made of the conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) at low temperatures, by conducting magnetoresistance measurements along with multi-frequency continuous-wave electrically detected magnetic resonance experiments. The measurements were performed on identical devices under similar conditions in order to independently assess the magnetic field-dependent spin-mixing mechanism, the so-called {\\Delta}g mechanism, which originates from differences in the charge-carrier g-factors induced by spin-orbit coupling.", "revisions": [ { "version": "v1", "updated": "2018-04-25T00:18:10.000Z" } ], "analyses": { "keywords": [ "organic semiconductors", "high-field magnetoresistance", "continuous-wave electrically detected magnetic", "weakly bound charge carrier pairs", "electrically detected magnetic resonance experiments" ], "note": { "typesetting": "TeX", "pages": 12, "language": "en", "license": "arXiv", "status": "editable" } } }