{
  "id": "1803.07920",
  "version": "v1",
  "published": "2018-03-21T13:46:16.000Z",
  "updated": "2018-03-21T13:46:16.000Z",
  "title": "Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors",
  "authors": [
    "Ramya Cuduvally",
    "Prathamesh Dhakras",
    "Phung Nguyen",
    "Harold L. Hughes",
    "Ji Ung Lee"
  ],
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension to a ballistic model (J. Appl. Phys. 76, 4879 (1994)) and includes transmission probability and the drain-channel coupling capacitor. The latter parameter gives rise to a theoretical RON that is significantly larger than those predicted previously. To validate our model, we fabricated n-channel MOSFETs with varying channel lengths. We show the length dependence of these parameters to support a quasi-ballistic description of our devices.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2018-03-21T13:46:16.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "two-parameter quasi-ballistic transport model",
      "nanoscale transistors",
      "purely ballistic transport model",
      "nanoscale mosfets",
      "ballistic model"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}