{
  "id": "1803.05144",
  "version": "v1",
  "published": "2018-03-14T06:13:23.000Z",
  "updated": "2018-03-14T06:13:23.000Z",
  "title": "Valley-Dependent Magnetoresistance in Two-Dimensional Semiconductors",
  "authors": [
    "Akihiko Sekine",
    "Allan H. MacDonald"
  ],
  "comment": "5 pages, 3 figures + 8 pages, 1 figure",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "We show theoretically that two-dimensional direct-gap semiconductors with a valley degree of freedom, including monolayer transition-metal dichalcogenides and gapped bilayer graphene, have a longitudinal magnetoconductivity contribution that is odd in valley and odd in the magnetic field applied perpendicular to the system. Using a quantum kinetic theory we show how this valley-dependent magnetoconductivity arises from the interplay between the momentum-space Berry curvature of Bloch electrons, the presence of a magnetic field, and disorder scattering. We discuss how the effect can be measured experimentally and used as a detector of valley polarization.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2018-03-14T06:13:23.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "two-dimensional semiconductors",
      "valley-dependent magnetoresistance",
      "two-dimensional direct-gap semiconductors",
      "monolayer transition-metal dichalcogenides",
      "momentum-space berry curvature"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 5,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}