{ "id": "1803.01771", "version": "v1", "published": "2018-03-05T16:53:01.000Z", "updated": "2018-03-05T16:53:01.000Z", "title": "Universal scaling laws in two-dimensional-material-based Schottky heterostructures", "authors": [ "Yee Sin Ang", "Hui Ying Yang", "L. K. Ang" ], "comment": "6 pages, 2 figures", "categories": [ "cond-mat.mes-hall", "cond-mat.mtrl-sci", "physics.app-ph" ], "abstract": "We identify a new universality in the carrier transport of two-dimensional(2D)-material-based Schottky heterostructures. We show that the reversed saturation current ($\\mathcal{J}$) scales \\emph{universally} with temperature ($T$) as $ \\log(\\mathcal{J}/T^{\\beta}) \\propto -1/T$, with $\\beta = 3/2$ for lateral Schottky heterostructures and $\\beta = 1$ for vertical Schottky heterostructures, over a wide range of 2D systems including nonrelativistic electron gas, Rashba spintronic system, single and few-layer graphene, and thin-films of topological solids. Such universalities originate from the strong coupling between the thermionic process and the in-plane carrier dynamics. Our model resolves some of the conflicting results from prior works and is in agreement with recent experiments. The universal scaling laws signal the breakdown of $\\beta=2$ scaling in the classic diode equation widely-used over the past 60 years. Our findings shall provide a simple analytical scaling for the extraction of the Schottky barrier height in 2D-material-based heterostructure, thus paving way for both fundamental understanding of nanoscale interface physics and applied device engineering.", "revisions": [ { "version": "v1", "updated": "2018-03-05T16:53:01.000Z" } ], "analyses": { "keywords": [ "two-dimensional-material-based schottky heterostructures", "schottky barrier height", "classic diode equation", "universal scaling laws signal", "in-plane carrier dynamics" ], "note": { "typesetting": "TeX", "pages": 6, "language": "en", "license": "arXiv", "status": "editable" } } }