{
  "id": "1712.04811",
  "version": "v1",
  "published": "2017-12-13T15:12:31.000Z",
  "updated": "2017-12-13T15:12:31.000Z",
  "title": "Spin-to-Charge Conversion in 2D Electron Gas and Single-layer Graphene Devices",
  "authors": [
    "J. G. G. S. Ramos",
    "T. C. Vasconcelos",
    "A. L. R. Barbosa"
  ],
  "comment": "Accepted for publication in the Journal of Applied Physics",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We investigate the spin-to-charge conversion emerging from a mesoscopic device connected to multiple terminals. We obtain analytical expressions to the characteristic coefficient of spin-to-charge conversion which are applied in two kinds of ballistic chaotic quantum dots at low temperature. We perform analytical diagrammatic calculations in the universal regime for two-dimensional electron gas and single-layer graphene with strong spin-orbit interaction in the universal regime. Furthermore, our analytical results are confirmed by numerical simulations. Finally, we connect our analytical finds to recent experimental measures giving a conceptual explanation about the apparent discrepancies between them.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2017-12-13T15:12:31.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "spin-to-charge conversion",
      "2d electron gas",
      "single-layer graphene devices",
      "universal regime",
      "ballistic chaotic quantum dots"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}