{
  "id": "1707.04154",
  "version": "v1",
  "published": "2017-07-13T14:51:41.000Z",
  "updated": "2017-07-13T14:51:41.000Z",
  "title": "Electric control of the bandgap in quantum wells with band-inverted junctions",
  "authors": [
    "A. Diaz-Fernandez",
    "Leonor Chico",
    "F. Dominguez-Adame"
  ],
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "In semiconductor heterojunctions with band-inversion, interface states are properly described by a two-band model, predicting the appearance of a Dirac cone in single junctions. However, in quantum wells the interface dispersion is quadratic in momentum and the energy spectrum presents a gap. We show that the interface gap shrinks under an electric field parallel to the growth direction. Therefore, the interface gap can be dynamically tuned in experiments on double-gated quantum wells based on band-inverted compounds.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2017-07-13T14:51:41.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "electric control",
      "band-inverted junctions",
      "electric field parallel",
      "interface gap shrinks",
      "interface states"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}