{ "id": "1707.00172", "version": "v1", "published": "2017-07-01T16:13:08.000Z", "updated": "2017-07-01T16:13:08.000Z", "title": "Slow Dynamics of the Electron-Glasses; the Role of Disorder", "authors": [ "Z. Ovadyahu" ], "comment": "10 figures", "journal": "Physical Review B 95, 134203 (2017)", "doi": "10.1103/PhysRevB.95.134203", "categories": [ "cond-mat.dis-nn" ], "abstract": "We examine in this work the role of disorder in contributing to the sluggish relaxation observed in intrinsic electron-glasses. Our approach is guided by several empirical observations: First and foremost, Anderson localization is a pre-requisite for observing these nonequilibrium phenomena. Secondly, sluggish relaxation appears to favor Anderson-insulators with relatively large Fermi-energies (hence proportionally large disorder). These observations motivated us to consider a way to measure the underlying disorder in a realistic Anderson insulator. Optical study using a series of amorphous indium-oxide (In_{x}O) establish a simple connection between carrier-concentration and the disorder necessary to approach the metal-insulator transition from the insulating side. This is used to estimate the typical magnitude of the quenched potential-fluctuation in the electron-glass phase of this system. The implications of our findings on the slow dynamics of Anderson-insulators are discussed. In particular, the reason for the absence of a memory-dip and the accompanying electron-glass effects in lightly-doped semiconductors emerges as a natural consequence of their weak disorder.", "revisions": [ { "version": "v1", "updated": "2017-07-01T16:13:08.000Z" } ], "analyses": { "keywords": [ "slow dynamics", "realistic anderson insulator", "intrinsic electron-glasses", "lightly-doped semiconductors emerges", "observations" ], "tags": [ "journal article" ], "publication": { "publisher": "APS", "journal": "Phys. Rev. B" }, "note": { "typesetting": "TeX", "pages": 0, "language": "en", "license": "arXiv", "status": "editable" } } }