{ "id": "1705.10429", "version": "v1", "published": "2017-05-30T01:49:48.000Z", "updated": "2017-05-30T01:49:48.000Z", "title": "Engineering of Neutral Excitons and Exciton Complexes in Transition Metal Dichalcogenide Monolayers through External Dielectric Screening", "authors": [ "Sven Borghardt", "Jhih-Sian Tu", "Florian Winkler", "Jürgen Schubert", "Willi Zander", "Kristján Lesson", "Beata E. Kardynał" ], "comment": "11 pages + 6 pages supporting information", "categories": [ "cond-mat.mes-hall" ], "abstract": "In order to fully exploit the potential of transition metal dichalcogenide monolayers (TMD-MLs), the well-controlled creation of atomically sharp lateral heterojunctions within these materials is highly desirable. A promising approach to create such heterojunctions is the local modulation of the electronic structure of an intrinsic TMD-ML via dielectric screening induced by its surrounding materials. For the realization of this non-invasive approach, an in-depth understanding of such dielectric effects is required. We report on the modulations of excitonic transitions in TMD-MLs through the effect of dielectric environments including low-k and high-k dielectric materials. We present absolute tuning ranges as large as 37 meV for the optical band gaps of WSe 2 and MoSe 2 MLs and relative tuning ranges on the order of 30% for the binding energies of neutral excitons in WSe 2 MLs. The findings suggest the possibility to reduce the electronic band gap of WSe 2 MLs by 120 meV, paving the way towards dielectrically defined lateral heterojunctions.", "revisions": [ { "version": "v1", "updated": "2017-05-30T01:49:48.000Z" } ], "analyses": { "keywords": [ "transition metal dichalcogenide monolayers", "neutral excitons", "external dielectric screening", "exciton complexes", "band gap" ], "note": { "typesetting": "TeX", "pages": 11, "language": "en", "license": "arXiv", "status": "editable" } } }