{
  "id": "1705.00443",
  "version": "v1",
  "published": "2017-05-01T08:44:17.000Z",
  "updated": "2017-05-01T08:44:17.000Z",
  "title": "Proximity effect and interface transparency in Al/InAs-nanowire/Al diffusive junctions",
  "authors": [
    "A. V. Bubis",
    "A. O. Denisov",
    "S. U. Piatrusha",
    "I. E. Batov",
    "J. Becker",
    "J. Treu",
    "D. Ruhstorfer",
    "G. Koblmüller",
    "V. S. Khrapai"
  ],
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We investigate the proximity effect in InAs nanowire (NW) junctions with superconducting contacts made of Al. The carrier density in InAs is tuned by means of the back gate voltage $V_g$. At high positive $V_g$ the devices feature transport signatures characteristic of diffusive junctions with highly transparent interfaces - sizable excess current, re-entrant resistance effect and proximity gap values ($\\Delta_N$) close to the Al gap ($\\Delta_0$). At decreasing $V_g$, we observe a reduction of the proximity gap down to $\\Delta_N\\approx\\Delta_0/2$ at NW conductances $\\sim2e^2/h$, which is interpreted in terms of carrier density dependent reduction of the Al/InAs interface transparency. We demonstrate that the experimental behavior of $\\Delta_N$ is closely reproduced by a model with shallow potential barrier at the Al/InAs interface.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2017-05-01T08:44:17.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "al/inas-nanowire/al diffusive junctions",
      "interface transparency",
      "proximity effect",
      "devices feature transport signatures characteristic",
      "proximity gap"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}