{ "id": "1704.02682", "version": "v1", "published": "2017-04-10T01:32:13.000Z", "updated": "2017-04-10T01:32:13.000Z", "title": "Large non-saturating magnetoresistance of Sb2Se2Te in high magnetic fields up to 31 T", "authors": [ "K. Shrestha", "V. Marinova", "D. Graf", "B. Lorenz", "C. W. Chu" ], "comment": "6 pages, 5 figures", "categories": [ "cond-mat.mes-hall" ], "abstract": "We have studied the magnetotransport properties of a Sb2Se2Te single crystal. Magnetoresistance (MR) is large and reaches to a value of 1100% at B=31 T without sign of saturation. The mobility estimated from the Drude model is 700 cm^2V^-1s^-1. Shubnikov de Haas oscillations are observed in applied magnetic fields above B=15 T. The analyses of quantum oscillation frequencies at different angles of rotation, as well as the presence of multiple frequencies in the frequency spectrum, suggest that Sb2Se2Te possesses a three-dimensional Fermi surface that is rather complex. Magnetoconductance shows a weak antilocalization (WAL) effect. The WAL curves do not scale with the normal components of magnetic fields, which proves that Sb2Se2Te is a topologically trivial system. The large MR in Sb2Se2Te is not due to the presence of a linear Dirac dispersion as observed in many topological systems, and it likely has a classical origin due to the mobility fluctuation and breaking of crystal structure symmetry. The large MR of Sb2Se2Te is suitable for utilization in electronic instruments such as a computer hard disc, high field magnetic sensors, and memory devices.", "revisions": [ { "version": "v1", "updated": "2017-04-10T01:32:13.000Z" } ], "analyses": { "keywords": [ "high magnetic fields", "large non-saturating magnetoresistance", "large mr", "high field magnetic sensors", "three-dimensional fermi surface" ], "note": { "typesetting": "TeX", "pages": 6, "language": "en", "license": "arXiv", "status": "editable" } } }