{
  "id": "1701.07854",
  "version": "v1",
  "published": "2017-01-26T19:35:28.000Z",
  "updated": "2017-01-26T19:35:28.000Z",
  "title": "Canted spin states and thermal spin crossover behavior in p-Si",
  "authors": [
    "P. C. Lou",
    "W. P. Beyermann",
    "S. Kumar"
  ],
  "comment": "20 pages, 4 main and 4 supplementary figures",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "Recent work on spin mediated thermal transport in semiconductor materials has led to the discovery of the spin Hall effect in p-Si. Spin accumulation may change the electro-thermal transport within the material, and thus may serve as an investigative tool for characterizing spin-mediated behavior. In Si, spin-phonon interaction is the primary spin relaxation mechanism. The absence of spin-phonon relaxation will create coherent spin states due to spin accumulation. Here we present the first experimental proof of spin accumulation induced coherent canted spin states in non-magnetic p-Si. Using magneto-thermal transport measurements, we show effect of spin accumulation due to the spin Hall effect on thermal conductivity of a p-Si specimen at low temperatures. The temperature-dependent V3{\\omega} measurement shows hysteretic thermal spin crossover behavior attributed to antiferromagnetic spin-spin interactions and spin-phonon interactions. The canted spin states originate from the antiferromagnetic interactions in p-Si, which is validated from the spin relaxation behavior in magnetoresistance measurement. The relaxation of canted spin states generates a giant spin current leading to switching of Ni80Fe20 layer. The switching behavior can provide an energy efficient mechanism for spintronics memory devices. This result opens a new paradigm in the field of spin-mediated semiconductor spintronics and antiferromagnetic spintronics.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2017-01-26T19:35:28.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "spin accumulation",
      "coherent canted spin states",
      "induced coherent canted spin",
      "spin hall effect",
      "hysteretic thermal spin crossover behavior"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 20,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}