{
  "id": "1701.03265",
  "version": "v1",
  "published": "2017-01-12T08:25:41.000Z",
  "updated": "2017-01-12T08:25:41.000Z",
  "title": "Inverse Edelstein effect of the surface states of a topological insulator",
  "authors": [
    "Hao Geng",
    "Wei Luo",
    "W. Y. Deng",
    "L. Sheng",
    "R. Shen",
    "D. Y. xing"
  ],
  "comment": "4 pages, 4 figures",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "The surface states of three-dimensional topological insulators posses the unique property of spin-momentum interlocking. This property gives rise to the interesting inverse Edelstein effect (IEE), in which an applied spin bias $\\mu$ is converted to a measurable charge voltage difference $V$. We develop a semiclassical theory for the IEE of the surface states of $\\text{Bi}_2\\text{Se}_3$ thin films, which is applicable from the ballistic regime to diffusive regime. We find that the IEE efficiency ratio $\\gamma=V/\\mu$ exhibits universal dependence on sample size, and approaches $\\pi/4$ in the ballistic limit and $1$ in the diffusive limit.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2017-01-12T08:25:41.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "surface states",
      "iee efficiency ratio",
      "three-dimensional topological insulators posses",
      "measurable charge voltage difference",
      "interesting inverse edelstein effect"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 4,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}