{
  "id": "1701.00506",
  "version": "v1",
  "published": "2017-01-02T19:25:00.000Z",
  "updated": "2017-01-02T19:25:00.000Z",
  "title": "Combined electrical transport and capacitance spectroscopy of a ${\\mathrm{MoS_2-LiNbO_3}}$ field effect transistor",
  "authors": [
    "W. Michailow",
    "F. J. R. Schülein",
    "B. Möller",
    "E. Preciado",
    "A. E. Nguyen",
    "G. v. Son",
    "J. Mann",
    "A. L. Hörner",
    "A. Wixforth",
    "L. Bartels",
    "H. J. Krenner"
  ],
  "comment": "to appear in Applied Physics Letters",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We have measured both the current-voltage ($I_\\mathrm{SD}$-$V_\\mathrm{GS}$) and capacitance-voltage ($C$-$V_\\mathrm{GS}$) characteristics of a $\\mathrm{MoS_2-LiNbO_3}$ field effect transistor. From the measured capacitance we calculate the electron surface density and show that its gate voltage dependence follows the theoretical prediction resulting from the two-dimensional free electron model. This model allows us to fit the measured $I_\\mathrm{SD}$-$V_\\mathrm{GS}$ characteristics over the \\emph{entire range} of $V_\\mathrm{GS}$. Combining this experimental result with the measured current-voltage characteristics, we determine the field effect mobility as a function of gate voltage. We show that for our device this improved combined approach yields significantly smaller values (more than a factor of 4) of the electron mobility than the conventional analysis of the current-voltage characteristics only.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2017-01-02T19:25:00.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "field effect transistor",
      "capacitance spectroscopy",
      "electrical transport",
      "two-dimensional free electron model",
      "approach yields significantly smaller values"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}