{ "id": "1611.00649", "version": "v1", "published": "2016-11-02T15:16:23.000Z", "updated": "2016-11-02T15:16:23.000Z", "title": "Twistronics: Manipulating the Electronic Properties of Two-dimensional Layered Structures through their Twist Angle", "authors": [ "Stephen Carr", "Daniel Massatt", "Shiang Fang. Paul Cazeaux", "Mitchell Luskin", "Efthimios Kaxiras" ], "comment": "7 pages, 4 figures, to be submitted to Phys. Rev. B", "categories": [ "cond-mat.mes-hall" ], "abstract": "The ability in experiments to control the relative twist angle between successive layers in two-dimensional (2D) materials offers a new approach to manipulating their electronic properties; we refer to this approach as \"twistronics\". A major challenge to theory is that, for arbitrary twist angles, the resulting structure involves incommensurate (aperiodic) 2D lattices. Here, we present a general method for the calculation of the electronic density of states of aperiodic 2D layered materials, using parameter-free hamiltonians derived from ab initio density-functional theory. We use graphene, a semimetal, and MoS$_2$, a representative of the transition metal dichalcogenide (TMDC) family of 2D semiconductors, to illustrate the application of our method, which enables fast and efficient simulation of multi-layered stacks in the presence of local disorder and external fields. We comment on the interesting features of their Density of States (DoS) as a function of twist-angle and local configuration and on how these features can be experimentally observed.", "revisions": [ { "version": "v1", "updated": "2016-11-02T15:16:23.000Z" } ], "analyses": { "keywords": [ "two-dimensional layered structures", "electronic properties", "twistronics", "ab initio density-functional theory", "aperiodic 2d layered materials" ], "note": { "typesetting": "TeX", "pages": 7, "language": "en", "license": "arXiv", "status": "editable" } } }