{
  "id": "1609.02930",
  "version": "v1",
  "published": "2016-09-09T20:12:21.000Z",
  "updated": "2016-09-09T20:12:21.000Z",
  "title": "Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe81Ga19",
  "authors": [
    "R. P. Beardsley",
    "D. E. Parkes",
    "J. Zemen",
    "S. Bowe",
    "K. W. Edmonds",
    "C. Reardon",
    "F. Maccherozzi",
    "I. Isakov",
    "P. A. Warburton",
    "R. P. Campion",
    "B. L. Gallagher",
    "S. A. Cavill",
    "A. W. Rushforth"
  ],
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We investigate the role of lithographically-induced strain relaxation in a micron-scaled device fabricated from the magnetostrictive alloy Fe81Ga19. The strain relaxation due to lithographic patterning induces a magnetic anisotropy that competes with the magnetocrystalline and shape induced anisotropy to play a crucial role in stabilising a flux-closing domain pattern. We use magnetic imaging, micromagnetic calculations and linear elastic modelling to investigate a region close to the edges of an etched structure. This highly-strained edge region has a significant influence on the magnetic domain configuration due to an induced magnetic anisotropy resulting from the inverse magnetostriction effect. Understanding this behaviour will be important when designing hybrid magneto-electric spintronic devices based on highly magnetostrictive materials.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2016-09-09T20:12:21.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "magnetic domain configuration",
      "microfabricated epitaxially grown fe81ga19",
      "lithographically-induced strain relaxation",
      "magnetic anisotropy",
      "designing hybrid magneto-electric spintronic devices"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}