{
  "id": "1605.00955",
  "version": "v1",
  "published": "2016-05-03T15:44:28.000Z",
  "updated": "2016-05-03T15:44:28.000Z",
  "title": "High-Performance Complementary III-V Tunnel FETs with Strain Engineering",
  "authors": [
    "Jun Z. Huang",
    "Yu Wang",
    "Pengyu Long",
    "Yaohua Tan",
    "Michael Povolotskyi",
    "Gerhard Klimeck"
  ],
  "comment": "6 pages, 11 figures",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Strain engineering has recently been explored to improve tunnel field-effect transistors (TFETs). Here, we report design and performance of strained ultra-thin-body (UTB) III-V TFETs by quantum transport simulations. It is found that for an InAs UTB confined in [001] orientation, uniaxial compressive strain in [100] or [110] orientation shrinks the band gap meanwhile reduces (increases) transport (transverse) effective masses. Thus it improves the ON state current of both n-type and p-type UTB InAs TFETs without lowering the source density of states. Applying the strain locally in the source region makes further improvements by suppressing the OFF state leakage. For p-type TFETs, the locally strained area can be extended into the channel to form a quantum well, giving rise to even larger ON state current that is comparable to the n-type ones. Therefore strain engineering is a promising option for improving complementary circuits based on UTB III-V TFETs.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2016-05-03T15:44:28.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "high-performance complementary iii-v tunnel fets",
      "strain engineering",
      "state current",
      "p-type utb inas tfets",
      "utb iii-v tfets"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 6,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}