{
  "id": "1603.04546",
  "version": "v1",
  "published": "2016-03-15T03:42:38.000Z",
  "updated": "2016-03-15T03:42:38.000Z",
  "title": "Anomalous behavior of 1/f noise in graphene near the charge neutrality point",
  "authors": [
    "Shunpei Takeshita",
    "Sadashige Matsuo",
    "Takahiro Tanaka",
    "Shu Nakaharai",
    "Kazuhito Tsukagoshi",
    "Takahiro Moriyama",
    "Teruo Ono",
    "Tomonori Arakawa",
    "Kensuke Kobayashi"
  ],
  "journal": "Appl. Phys. Lett. 108, 103106 (2016)",
  "doi": "10.1063/1.4943642",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We investigate the noise in single layer graphene devices from equilibrium to far from equilibrium and found that the 1/f noise shows an anomalous dependence on the source-drain bias voltage (VSD). While the Hooge relation is not the case around the charge neutrality point, we found that it is recovered at very low VSD region. We propose that the depinning of the electron-hole puddles is induced at finite VSD, which may explain this anomalous noise behavior.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2016-03-15T03:42:38.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "charge neutrality point",
      "anomalous behavior",
      "single layer graphene devices",
      "low vsd region",
      "source-drain bias voltage"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "AIP"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}