{
  "id": "1602.04013",
  "version": "v1",
  "published": "2016-02-12T11:10:13.000Z",
  "updated": "2016-02-12T11:10:13.000Z",
  "title": "Method for determining the residual electron- and hole- densities about the neutrality point over the gate-controlled n $\\leftrightarrow$ p transition in graphene",
  "authors": [
    "Ramesh G. Mani"
  ],
  "comment": "4 figures",
  "journal": "Appl. Phys. lett. 108, 033507 (2016)",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "The Hall effect, and the diagonal resistance, which indicates a residual resistivity $\\rho_{xx} \\approx h/4e^{2}$, are experimentally examined over the p$\\leftrightarrow$n transition about the nominal neutrality point in chemical vapor deposition (CVD) grown graphene. A distribution of neutrality potentials is invoked in conjunction with multi-carrier conduction to model the experimental observations. From the modeling, we extract the effective residual electron- and hole- densities around the nominal neutrality point. The results indicate mixed transport due to co-existing electrons and holes in large area zero-band gap CVD graphene devices, which indicates domain confined ambipolar currents broadly over the gate-induced n $\\leftrightarrow$ p transition.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2016-02-12T11:10:13.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "nominal neutrality point",
      "transition",
      "large area zero-band gap cvd",
      "zero-band gap cvd graphene devices",
      "confined ambipolar currents"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}