{
  "id": "1601.05772",
  "version": "v1",
  "published": "2016-01-21T20:26:15.000Z",
  "updated": "2016-01-21T20:26:15.000Z",
  "title": "First-Order Phase Transitions in Memristive Networks",
  "authors": [
    "Forrest C. Sheldon",
    "Massimiliano Di Ventra"
  ],
  "comment": "7 pages, 6 figures",
  "categories": [
    "cond-mat.stat-mech",
    "cond-mat.mes-hall"
  ],
  "abstract": "The development of neuromorphic systems based on memristive elements - resistors with memory - requires a fundamental understanding of their collective dynamics when organized in networks. Here, we study an experimentally inspired model of two-dimensional disordered memristive networks subject to a slowly ramped voltage and show that these networks undergo a first-order phase transition in the conductivity for sufficiently high values of memory, as quantified by the memristive ON/OFF ratio. We also provide a mean-field theory, inspired by the zero-temperature random-field Ising model, that reproduces many features of the transition. Verification of our predictions is within reach of present experimentally realizable systems.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2016-01-21T20:26:15.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "first-order phase transition",
      "two-dimensional disordered memristive networks subject",
      "zero-temperature random-field ising model",
      "sufficiently high values",
      "networks undergo"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 7,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2016arXiv160105772S"
    }
  }
}