{
  "id": "1601.01609",
  "version": "v1",
  "published": "2016-01-07T17:21:56.000Z",
  "updated": "2016-01-07T17:21:56.000Z",
  "title": "Experimental determination of tunneling characteristics and dwell times from temperature dependence of Al/Al$_2$O$_3$/Al junctions",
  "authors": [
    "Edgar J. Patiño",
    "N. G. Kelkar"
  ],
  "comment": "3 figures",
  "journal": "Appl. Phys. Lett. 107, 253502 (2015); http://dx.doi.org/10.1063/1.4938209",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "Measurements of current-voltage (I-V) characteristics of a high quality Al/Al$_2$O$_3$/Al junction at temperatures ranging from 3.5 K to 300 K have been used to extract the barrier properties. Fitting results using Simmons' model led to a constant value of barrier width $s$$\\sim$20.8~$\\textrm{\\AA}$ and a continuous increase in the barrier height with decreasing temperature. The latter is used to determine the energy band gap temperature dependence and average phonon frequency $\\omega$ = 2.05 $\\times$ 10$^{13}$ sec$^{-1}$ in Al$_2$O$_3$, which adds confidence to the precision of our measurements. The barrier parameters are used to extract the temperature dependent dwell times in tunneling ($\\tau_D$ = 3.6 $\\times$ 10$^{-16}$ sec at mid-barrier energies) and locate resonances above the barrier.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2016-01-07T17:21:56.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "experimental determination",
      "dwell times",
      "temperature dependence",
      "tunneling characteristics",
      "high quality al/al"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2016arXiv160101609P"
    }
  }
}