{
  "id": "1512.06917",
  "version": "v1",
  "published": "2015-12-22T00:28:25.000Z",
  "updated": "2015-12-22T00:28:25.000Z",
  "title": "Effect of Mn doping on ultrafast carrier dynamics in thin films of the topological insulator Bi2Se3",
  "authors": [
    "Yuri D. Glinka",
    "Sercan Babakiray",
    "Mikel B. Holcomb",
    "David Lederman"
  ],
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Transient reflectivity from 12 nm thick Bi2-xMnxSe3 films revealed a strong dependence of rise-time and decay-time constants on photoexcited carrier density and Mn content. In undoped samples (x = 0), these time constants are exclusively governed by electron-electron and electron-phonon scattering, respectively, whereas in films with x = 0.013-0.27 ultrafast carrier dynamics are completely controlled by photoexcited electron trapping by ionized Mn2+ acceptors and their dimers. The shortest decay-time of ~0.75 ps measured for the film with x = 0.27 reaches the characteristic value of bilayer graphene, thus suggesting a great potential of Mn-doped Bi2Se3 films for applications in high-speed optoelectronic devices.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2015-12-22T00:28:25.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "ultrafast carrier dynamics",
      "topological insulator bi2se3",
      "thin films",
      "mn doping",
      "nm thick bi2-xmnxse3 films"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}