{
  "id": "1509.03896",
  "version": "v1",
  "published": "2015-09-13T20:34:38.000Z",
  "updated": "2015-09-13T20:34:38.000Z",
  "title": "High-Mobility Holes in Dual-Gated WSe$_2$ Field-Effect Transistors",
  "authors": [
    "Hema C. P. Movva",
    "Amritesh Rai",
    "Sangwoo Kang",
    "Kyounghwan Kim",
    "Babak Fallahazad",
    "Takashi Taniguchi",
    "Kenji Watanabe",
    "Emanuel Tutuc",
    "Sanjay K. Banerjee"
  ],
  "comment": "18 pages, 5 figures, 7 supporting figures, ACS Nano 2015",
  "doi": "10.1021/acsnano.5b04611",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "We demonstrate dual-gated $p$-type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe$_2$) using high work-function platinum source/drain contacts, and a hexagonal boron nitride top-gate dielectric. A device topology with contacts underneath the WSe$_2$ results in $p$-FETs with $I_{ON}$/$I_{OFF}$ ratios exceeding 10$^7$, and contacts that remain Ohmic down to cryogenic temperatures. The output characteristics show current saturation and gate tunable negative differential resistance. The devices show intrinsic hole mobilities around 140 cm$^2$/Vs at room temperature, and approaching 4,000 cm$^2$/Vs at 2 K. Temperature-dependent transport measurements show a metal-insulator transition, with an insulating phase at low densities, and a metallic phase at high densities. The mobility shows a strong temperature dependence consistent with phonon scattering, and saturates at low temperatures, possibly limited by Coulomb scattering, or defects.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2015-09-13T20:34:38.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "field-effect transistors",
      "high-mobility holes",
      "dual-gated wse",
      "tunable negative differential resistance",
      "hexagonal boron nitride top-gate dielectric"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "ACS"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 18,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}