{
  "id": "1508.02578",
  "version": "v1",
  "published": "2015-08-11T12:47:33.000Z",
  "updated": "2015-08-11T12:47:33.000Z",
  "title": "Observation of reduced 1/f noise in Graphene field effect transistors on Boron Nitride substrates",
  "authors": [
    "Morteza Kayyalha",
    "Yong P. Chen"
  ],
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We have investigated the low frequency (f) flicker (also called 1/f) noise of single-layer graphene devices on h-BN (placed on SiO2/Si) along with those on SiO2/Si. We observe that the devices fabricated on h-BN have on average one order of magnitude lower noise amplitude compared with devices fabricated on SiO2/Si. We associate this noise reduction to the lower densities of impurities and trap sites in h-BN than in SiO2. Furthermore, the gate voltage dependent noise amplitude shows a broad maximum at Dirac point for devices on h-BN, in contrast to the M-shaped behavior showing a minimum at Dirac point for devices on SiO2, consistent with the reduced charge inhomogeneity (puddles) for graphene on h-BN. This study demonstrates that the use of h-BN as a substrate or dielectric can be a simple and efficient noise reduction technique valuable for electronic applications of graphene and other nanomaterials.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2015-08-11T12:47:33.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "graphene field effect transistors",
      "boron nitride substrates",
      "noise reduction technique valuable",
      "lower noise amplitude",
      "gate voltage dependent noise amplitude"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}