{
  "id": "1508.01809",
  "version": "v1",
  "published": "2015-08-07T20:35:10.000Z",
  "updated": "2015-08-07T20:35:10.000Z",
  "title": "Effects of electron-hole asymmetry near the Dirac point in graphene",
  "authors": [
    "Salvatore Croce"
  ],
  "comment": "9 pages(+2), 6 figures",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci",
    "cond-mat.str-el"
  ],
  "abstract": "In the recent years many researches were performed about graphene. Graphene is always considered a half metal or a zero gap semiconductor. In the last year new experiments were done about graphene on boron nitride and they obtained an insulating behaviour and a power law for conductivity at the charge neutrality point (CNP) or Dirac point (DP)(PhysRevLett.110.216601). In this work we will explore the electron-hole asymmetry and the disorder in graphene. In particular we analyze the asymmetry in the ordered phase, considering thermal doping at half filling and with a non zero chemical potential. After that we use the self consistent Born approximation for calculating the self energy correction from impurity scattering. Furthermore we shall analyze the electron-phonon interaction, using the deformation potential model for obtaining the temperature dependence for the compressibility. Finally we will speculate about temperature dependence of conductivity.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2015-08-07T20:35:10.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "dirac point",
      "electron-hole asymmetry",
      "self consistent born approximation",
      "temperature dependence",
      "charge neutrality point"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 9,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}