{
  "id": "1508.00805",
  "version": "v1",
  "published": "2015-08-04T15:54:03.000Z",
  "updated": "2015-08-04T15:54:03.000Z",
  "title": "Graphene field effect transistors with Niobium contacts and asymmetric transfer characteristics",
  "authors": [
    "Antonio Di Bartolomeo",
    "Filippo Giubileo",
    "Francesco Romeo",
    "Paolo Sabatino",
    "Giovanni Carapella",
    "Laura Iemmo",
    "Thomas Schroeder",
    "Grzegorz Lupina"
  ],
  "comment": "10 pages, Research Paper",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We fabricate back-gated field effect transistors using Niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10-4 mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2015-08-04T15:54:03.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "graphene field effect transistors",
      "niobium contacts",
      "fabricate back-gated field effect transistors",
      "report asymmetric transfer characteristics"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 10,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}