{ "id": "1507.07929", "version": "v1", "published": "2015-07-28T20:00:36.000Z", "updated": "2015-07-28T20:00:36.000Z", "title": "Optical Control of Donor Spin Qubits in Silicon", "authors": [ "M. J. Gullans", "J. M. Taylor" ], "comment": "11 pages, 6 figures", "categories": [ "cond-mat.mes-hall", "quant-ph" ], "abstract": "We show how to achieve optical, spin-selective transitions from the ground state to excited orbital states of group-V donors (P, As, Sb, Bi) in silicon. We consider two approaches based on either resonant, far-infrared (IR) transitions of the neutral donor or resonant, near-IR excitonic transitions. For far-IR light, we calculate the dipole matrix elements between the valley-orbit and spin-orbit split states for all the goup-V donors using effective mass theory. We then calculate the maximum rate and amount of electron-nuclear spin-polarization achievable through optical pumping with circularly polarized light. We find this approach is most promising for Bi donors due to their large spin-orbit and valley-orbit interactions. Using near-IR light, spin-selective excitation is possible for all the donors by driving a two-photon $\\Lambda$-transition from the ground state to higher orbitals with even parity. We show that externally applied electric fields or strain allow similar, spin-selective $\\Lambda$-transition to odd-parity excited states. We anticipate these results will be useful for future spectroscopic investigations of donors, quantum control and state preparation of donor spin qubits, and for developing a coherent interface between donor spin qubits and single photons.", "revisions": [ { "version": "v1", "updated": "2015-07-28T20:00:36.000Z" } ], "analyses": { "keywords": [ "donor spin qubits", "optical control", "ground state", "dipole matrix elements", "spin-orbit split states" ], "note": { "typesetting": "TeX", "pages": 11, "language": "en", "license": "arXiv", "status": "editable" } } }