{ "id": "1507.04225", "version": "v1", "published": "2015-07-15T14:04:20.000Z", "updated": "2015-07-15T14:04:20.000Z", "title": "Charge and Valley conductances and Tunnelling magneto-resistance in ferromagnetic-normal-ferromagnetic junctions of silicene", "authors": [ "Ruchi Saxena", "Arijit Saha", "Sumathi Rao" ], "comment": "8 pages, 9 pdf figures", "categories": [ "cond-mat.mes-hall" ], "abstract": "We investigate charge and valley conductances along with the tunnelling magneto-resistance (TMR) in silicene junctions composed of normal silicene and ferromagnetic silicene. We show distinct features of the conductances and the TMR, as the ferromagnetic-normal-ferromagnetic (FNF) junction is tuned by an external electric field. We analyse the behaviour of the charge and valley conductances in terms of the independent conductances at the two valleys and the band structure of ferromagnetic silicene and show how the conductances are affected by the vanishing of the propagating states at one or the other valley. In particular, unlike in graphene, the band structure at the two valleys are independently affected by the spin in the ferromagnetic regions and lead to non-zero valley conductances, which can be tuned by the external electric field. We also investigate the oscillatory behavior of the TMR with respect to the barrier potential in the presence of spin-independent as well as spin-dependent barriers in the normal silicene region and note that the TMR can even go from positive to negative values, as a function of the external electric field.", "revisions": [ { "version": "v1", "updated": "2015-07-15T14:04:20.000Z" } ], "analyses": { "keywords": [ "external electric field", "tunnelling magneto-resistance", "ferromagnetic-normal-ferromagnetic junctions", "ferromagnetic silicene", "band structure" ], "note": { "typesetting": "TeX", "pages": 8, "language": "en", "license": "arXiv", "status": "editable" } } }