{
  "id": "1506.02463",
  "version": "v1",
  "published": "2015-06-08T12:31:00.000Z",
  "updated": "2015-06-08T12:31:00.000Z",
  "title": "The dielectric genome of van der Waals heterostructures",
  "authors": [
    "Kirsten Andersen",
    "Simone Latini",
    "Kristian S. Thygesen"
  ],
  "comment": "To be published in Nano Lett",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Vertical stacking of two-dimensional (2D) crystals, such as graphene and hexagonal boron nitride, has recently lead to a new class of materials known as van der Waals heterostructures (vdWHs) with unique and highly tunable electronic properties. Abinitio calculations should in principle provide a powerful tool for modeling and guiding the design of vdWHs, but in their traditional, form such calculations are only feasible for commensurable structures with a few layers. Here we show that the dielectric properties of realistic, incommensurable vdWHs comprising hundreds of layers can be calculated with ab-initio accuracy using a multi-scale approach where the dielectric functions of the individual layers (the dielectric building blocks) are coupled simply via their long-range Coulomb interaction. We use the method to illustrate the 2D- 3D dielectric transition in multi-layer MoS2 crystals, the hybridization of quantum plasmons in large graphene/hBN heterostructures, and to demonstrate the intricate effect of substrate screening on the non-Rydberg exciton series in supported WS2.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2015-06-08T12:31:00.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "van der waals heterostructures",
      "dielectric genome",
      "hexagonal boron nitride",
      "long-range coulomb interaction",
      "3d dielectric transition"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}