{
  "id": "1505.03292",
  "version": "v1",
  "published": "2015-05-13T09:48:13.000Z",
  "updated": "2015-05-13T09:48:13.000Z",
  "title": "Maximizing the thermoelectric performance of topological insulator Bi2Te3 films in the few-quintuple layer regime",
  "authors": [
    "Jinghua Liang",
    "Long Cheng",
    "Jie Zhang",
    "Huijun Liu",
    "Zhenyu Zhang"
  ],
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Using first-principles calculations and Boltzmann theory, we explore the feasibility to maximize the thermoelectric figure of merit (ZT) of topological insulator Bi2Te3 films in the few-quintuple layer regime. We discover that the delicate competitions between the surface and bulk contributions, coupled with the overall quantum size effects, lead to a novel and generic non-monotonous dependence of ZT on the film thickness. In particular, when the system crosses into the topologically non-trivial regime upon increasing the film thickness, the much longer surface relaxation time associated with the robust nature of the topological surface states results in a maximal ZT value, which can be further optimized to ~2.0 under physically realistic conditions. We also reveal the appealing potential of bridging the long-standing ZT asymmetry of p- and n-type Bi2Te3 systems. These findings help to establish intricate connections between the thermoelectric materials and topological insulators.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2015-05-13T09:48:13.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "topological insulator bi2te3 films",
      "few-quintuple layer regime",
      "thermoelectric performance",
      "surface relaxation time",
      "film thickness"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}