{
  "id": "1503.00390",
  "version": "v1",
  "published": "2015-03-02T01:55:26.000Z",
  "updated": "2015-03-02T01:55:26.000Z",
  "title": "Lateral Heterojunction Sb2Te3/Bi2Te3 and its topological transport",
  "authors": [
    "Fucong Fei",
    "Qianjin Wang",
    "Zhongxia Wei",
    "Rui Wang",
    "Danfeng Pan",
    "Bo Zhao",
    "Xuefeng Wang",
    "Xinran Wang",
    "Fengqi Song",
    "Baigeng Wang",
    "Jianguo Wan",
    "Guanghou Wang"
  ],
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "A lateral heterojunction of topological insulator Sb2Te3/Bi2Te3 was successfully synthesized using a two-step solvothermal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized procedure was used. Inspecting the heterojunction using high-resolution transmission electron microscopy showed that epitaxial growth occurred along the horizontal plane. A rectification curve was observed at low temperatures. Quantum correction from the weak antilocalization reveals the transport of the topological surface state. There was, therefore, a staggered-gap lateral heterojunction with a small junction voltage, which is appealing for a platform for spin filters and one-dimensional topological interface states.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2015-03-02T01:55:26.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "lateral heterojunction sb2te3/bi2te3",
      "topological transport",
      "one-dimensional topological interface states",
      "staggered-gap lateral heterojunction",
      "two-step solvothermal method"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}