{
  "id": "1502.03452",
  "version": "v1",
  "published": "2014-11-01T18:46:47.000Z",
  "updated": "2014-11-01T18:46:47.000Z",
  "title": "Insights into vibrational and electronic properties of MoS$_2$ using Raman, photoluminescence and transport studies",
  "authors": [
    "Achintya Bera",
    "A. K. Sood"
  ],
  "comment": "76 pages, 49 figures",
  "journal": "Springer International Publishing, 21 ,155-215 (2014)",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We review vibrational and electronic properties of single and a few layer MoS$_2$ relevant to understand their resonant and non-resonant Raman scattering results. In particular, the optical modes and low frequency shear and layer breathing modes show significant dependence on the number of MoS$_2$ layers. Further, the electron doping of the MoS$_2$ single layer achieved using top-gating in a field effect transistor renormalizes the two optical modes A$_{1g}$ and E$^1_{2g}$ differently due to symmetry-dependent electron-phonon coupling. The issues related to carrier mobility, the Schottky barrier at the MoS$_2$-metal contact pads and the modifications of the dielectric environment are addressed. The direct optical transitions for single layer-MoS$_2$ involve two excitons at K-point in the Brillouin zone and their stability with temperature and pressure has been reviewed. Finally, the Fermi-level dependence of spectral shift for a quasiparticle, called trion, has been discussed.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2014-11-01T18:46:47.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "electronic properties",
      "transport studies",
      "vibrational",
      "field effect transistor renormalizes",
      "photoluminescence"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 76,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}