{
  "id": "1502.02013",
  "version": "v1",
  "published": "2015-02-06T20:26:44.000Z",
  "updated": "2015-02-06T20:26:44.000Z",
  "title": "The effect of bilayer domains on electronic transport properties of epitaxial graphene on SiC",
  "authors": [
    "Tom Yager",
    "Arseniy Lartsev",
    "Rositza Yakimova",
    "Samuel Lara-Avila",
    "Sergey Kubatkin"
  ],
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Magnetotransport measurements on Hall bar devices fabricated on purely monolayer epitaxial graphene on Silicon Carbide (SiC/G) show a very tight spread in carrier concentration and mobility across wafer- size dimensions. In contrast, SiC/G devices containing bilayer graphene domains display variations in their electronic properties linked to the amount of bilayer content.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2015-02-06T20:26:44.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "electronic transport properties",
      "epitaxial graphene",
      "bilayer domains",
      "devices containing bilayer graphene",
      "containing bilayer graphene domains"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}