{
  "id": "1501.06497",
  "version": "v1",
  "published": "2015-01-26T17:50:31.000Z",
  "updated": "2015-01-26T17:50:31.000Z",
  "title": "Granularity Controlled Non-Saturating Linear Magneto-resistance in Topological Insulator Bi2Te3 Films",
  "authors": [
    "Z. H. Wang",
    "L. Yang",
    "X. J. Li",
    "X. T. Zhao",
    "H. L. Wang",
    "Z. D. Zhang",
    "Xuan P. A. Gao"
  ],
  "journal": "Nano Letters, 14 (11), 6510-6514 (2014)",
  "doi": "10.1021/nl503083q",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We report on the magneto-transport properties of chemical vapor deposition grown films of interconnected Bi2Te3 nanoplates. Similar to many other topological insulator (TI) materials, these granular Bi2Te3 films exhibit a linear magneto-resistance (LMR) effect which has received much recent attention. Studying samples with different degree of granularity, we find a universal correlation between the magnitude of the LMR and the average mobility (<\\mu>) of the films over nearly two orders of magnitude change of <\\mu>. The granularity controlled LMR effect here is attributed to the mobility fluctuation induced classical LMR according to the Parish-Littlewood theory. These findings have implications to both the fundamental understanding and magneto-resistive device applications of TI and small bandgap semiconductor materials.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2015-01-26T17:50:31.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "granularity controlled non-saturating linear magneto-resistance",
      "topological insulator bi2te3 films",
      "vapor deposition grown films",
      "fluctuation induced classical lmr"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}