{
  "id": "1501.02273",
  "version": "v1",
  "published": "2015-01-09T21:00:19.000Z",
  "updated": "2015-01-09T21:00:19.000Z",
  "title": "Exciton band structure of monolayer MoS$_2$",
  "authors": [
    "Fengcheng Wu",
    "Fanyao Qu",
    "A. H. MacDonald"
  ],
  "comment": "9 pages, 5 figures",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We address the properties of excitons in monolayer MoS$_2$ from a theoretical point of view, showing that low-energy excitonic states occur both at the Brillouin zone center and at the Brillouin-zone corners, that binding energies at the Brillouin-zone center deviate strongly from the $(n-1/2)^{-2}$ pattern of the two-dimensional hydrogenic model, and that the valley-degenerate exciton doublet at the Brillouin-zone center splits at finite momentum into an upper mode with non-analytic linear dispersion and a lower mode with quadratic dispersion. Although monolayer MoS$_2$ is a direct-gap semiconductor when classified by its quasiparticle band structure, it may well be an indirect gap material when classified by its excitation spectra.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2015-01-09T21:00:19.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "exciton band structure",
      "monolayer mos",
      "low-energy excitonic states occur",
      "non-analytic linear dispersion",
      "brillouin-zone center splits"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 9,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}