{
  "id": "1411.0014",
  "version": "v1",
  "published": "2014-10-31T20:13:57.000Z",
  "updated": "2014-10-31T20:13:57.000Z",
  "title": "Relating Spatially Resolved Maps of the Schottky Barrier Height to Metal/Semiconductor Interface Composition",
  "authors": [
    "Robert Balsano",
    "Chris Durcan",
    "Akitomo Matsubayashi",
    "Vincent P. LaBella"
  ],
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "The Schottky barrier height (SBH) is mapped with nanoscale resolution at pure Au/Si(001) and mixed Au/Ag/Si(001) interfaces utilizing ballistic electron emission microscopy (BEEM) by acquiring and fitting spectra every 11.7 nm over a 1 micron by 1 micron area. The energetic distribution of the SBH for the mixed interfaces contain several local maximums indicative of a mixture of metal species at the interface. To estimate the composition at the interface, the distributions are fit to multiple Gaussians that account for the species, \"pinch-off\" effects, and defects. This electrostatic composition is compared to Rutherford backscattering spectrometry (RBS) and x-ray photo-emission spectroscopy (XPS) measurements to relate it to the physical composition at the interface.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2014-10-31T20:13:57.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "schottky barrier height",
      "relating spatially resolved maps",
      "metal/semiconductor interface composition",
      "ballistic electron emission microscopy",
      "utilizing ballistic electron emission"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2014arXiv1411.0014B"
    }
  }
}