{
  "id": "1410.2237",
  "version": "v1",
  "published": "2014-10-08T19:59:02.000Z",
  "updated": "2014-10-08T19:59:02.000Z",
  "title": "Nanoscale Electrostatic Confinement at Oxide Interfaces",
  "authors": [
    "Srijit Goswami",
    "Emre Mulazimoglu",
    "Lieven M. K. Vandersypen",
    "Andrea D. Caviglia"
  ],
  "comment": "8 pages, 6 figures (includes supplementary information)",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We develop a robust and versatile platform to define nanostructures at oxide interfaces via patterned top gates. Using LaAlO$_3$/SrTiO$_3$ as a model system, we demonstrate controllable confinement of electrons to nanoscale regions in the conducting interface. The excellent gate response, ultra-low leakage currents, and long term stability of these gates allows us to perform a detailed study of devices in a split-gate geometry. Electrical transport through such devices displays a distinct threshold associated with depletion directly below the gates, resulting in the formation of a narrow conducting channel even at room temperature. We examine the effects of cross-talk between the gates, and also show that a combination of top gates and back gate can be used to efficiently modulate charge transport through these nanostructures.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2014-10-08T19:59:02.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "nanoscale electrostatic confinement",
      "oxide interfaces",
      "ultra-low leakage currents",
      "efficiently modulate charge transport",
      "excellent gate response"
    ],
    "publication": {
      "doi": "10.1021/acs.nanolett.5b00216",
      "journal": "Nano Letters",
      "year": 2015,
      "month": "Apr",
      "volume": 15,
      "number": 4,
      "pages": 2627
    },
    "note": {
      "typesetting": "TeX",
      "pages": 8,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2015NanoL..15.2627G"
    }
  }
}