{
  "id": "1405.3077",
  "version": "v4",
  "published": "2014-05-13T09:36:25.000Z",
  "updated": "2015-07-28T01:23:09.000Z",
  "title": "Electronic and Transport Property of Phosphorene Nanoribbon",
  "authors": [
    "Qingyun Wu",
    "Lei Shen",
    "Ming Yang",
    "Zhigao Huang",
    "Yuan Ping Feng"
  ],
  "comment": "accepted by Physical Review B (2015)",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "By combining density functional theory and nonequilibrium Green's function, we study the electronic and transport properties of monolayer black phosphorus nanoribbons (PNRs). First, we investigate the band-gap of PNRs and its modulation by the ribbon width and an external transverse electric feld. Our calculations indicate a giant Stark effect in PNRs, which can switch on transport channels of semiconducting PNRs under low bias, inducing an insulator-metal-transition. Next, we study the transport channels in PNRs via the calculations of the current density and local electron transmission pathway. In contrast to graphene and MoS_2 nanoribbons, the carrier transport channels under low bias are mainly located in the interior of both armchair and zigzag PNRs, and immune to a small amount of edge defects. Lastly, a device of the PNR-based dual-gate feld-effect-transistor, with high on/off?ratio of 10^3, is proposed based on the giant electric feld tuning effect.",
  "revisions": [
    {
      "version": "v3",
      "updated": "2014-06-10T11:31:30.000Z",
      "title": "Band Gaps and Giant Stark Effect in Nonchiral Phosphorene Nanoribbons",
      "abstract": "From the first demonstration of carbon nanotube field-effect-transistors (FETs) in 1998 to graphene nanoribbon FETs in 2008 and MoS2 nanoribbon FETs in 2012, various 1D nanotube or nanoribbon FETs are proposed. However, the chiral behaviour (armchair and zigzag), the structural symmetry, and screening of electric fields of these 1D materials seriously hampers the development of their applications in FETs. In this work, we find very unique electronic structures of monolayer black phosphorus (phosphorene) nanoribbons, i.e., nonchirality and no symmetry-dependent edge states, in contrast to all known 1D nanomaterials. It is because the s-p hybridization of central phosphorus atoms contributes to the valence band (hole) and conduction band (electron) based on our band structure calculations. The most importance is that such band gaps can have a strong response to the transverse electric field, i.e., a giant Stark effect. We give a clear physics explanation on the giant Stark effect. Finally, our transport calculations show that PNR-FETs, utilizing such giant Stark effect, can have high on/off ratio which is the key feature of logic operation in transistors.",
      "comment": "4 figures, 13 pages, 1 Supporting Information",
      "journal": null,
      "doi": null
    },
    {
      "version": "v4",
      "updated": "2015-07-28T01:23:09.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "73.61.Cw",
      "71.15.Mb",
      "73.22.-f",
      "73.63.-b"
    ],
    "keywords": [
      "giant stark effect",
      "nonchiral phosphorene nanoribbons",
      "band gaps",
      "central phosphorus atoms contributes",
      "mos2 nanoribbon fets"
    ],
    "publication": {
      "doi": "10.1103/PhysRevB.92.035436",
      "journal": "Physical Review B",
      "year": 2015,
      "month": "Jul",
      "volume": 92,
      "number": 3,
      "pages": "035436"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 13,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2015PhRvB..92c5436W"
    }
  }
}