{
  "id": "1405.1093",
  "version": "v1",
  "published": "2014-05-05T22:00:57.000Z",
  "updated": "2014-05-05T22:00:57.000Z",
  "title": "Hall field-induced resistance oscillations in Ge/SiGe quantum wells",
  "authors": [
    "Q. Shi",
    "M. A. Zudov",
    "O. A. Mironov",
    "D. R. Leadley"
  ],
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We report on a magnetotransport study in a high-mobility 2D hole gas hosted in a pure Ge/SiGe quantum well subject to dc electric fields and high frequency microwave radiation. We find that under applied dc bias the differential resistivity exhibits a pronounced maximum at a magnetic field which increases linearly with the applied current. We associate this maximum with the fundamental peak of Hall field-induced resistance oscillations (HIRO) which are known to occur in 2D electron gases in GaAs/AlGaAs systems. After taking into account the Dingle factor correction, we find that the position of the HIRO peak is well described by the hole effective mass $m^\\star \\approx 0.09\\,m_0$, obtained from microwave photoresistance in the same sample.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2014-05-05T22:00:57.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "73.40.-c",
      "73.21.-b",
      "73.43.-f"
    ],
    "keywords": [
      "hall field-induced resistance oscillations",
      "ge/sige quantum wells",
      "high frequency microwave radiation",
      "dc electric fields",
      "high-mobility 2d hole gas"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "doi": "10.1103/PhysRevB.90.161301",
      "journal": "Physical Review B",
      "year": 2014,
      "month": "Oct",
      "volume": 90,
      "number": 16,
      "pages": 161301
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2014PhRvB..90p1301S"
    }
  }
}