{
  "id": "1404.2198",
  "version": "v1",
  "published": "2014-04-08T16:33:30.000Z",
  "updated": "2014-04-08T16:33:30.000Z",
  "title": "Fingerprints of Inelastic Transport at the Surface of the Topological Insulator Bi2Se3: Role of Electron-Phonon Coupling",
  "authors": [
    "M. V. Costache",
    "I. Neumann",
    "J. F. Sierra",
    "V. Marinova",
    "M. M. Gospodinov",
    "S. Roche",
    "S. O. Valenzuela"
  ],
  "comment": "Supplementary Material at: http://journals.aps.org/prl/supplemental/10.1103/PhysRevLett.112.086601/TIPhonon_SM.pdf",
  "journal": "Phys. Rev. Lett. 112, 086601 (2014)",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We report on electric-field and temperature dependent transport measurements in exfoliated thin crystals of Bi$_{2}$Se$_{3}$ topological insulator. At low temperatures ($< 50$ K) and when the chemical potential lies inside the bulk gap, the crystal resistivity is strongly temperature dependent, reflecting inelastic scattering due to the thermal activation of optical phonons. A linear increase of the current with voltage is obtained up to a threshold value at which current saturation takes place. We show that the activated behavior, the voltage threshold and the saturation current can all be quantitatively explained by considering a single optical phonon mode with energy $\\hbar \\Omega \\approx 8$ meV. This phonon mode strongly interacts with the surface states of the material and represents the dominant source of scattering at the surface at high electric fields.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2014-04-08T16:33:30.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "72.10.Di",
      "72.20.Ht",
      "73.20.-r",
      "73.25.+i"
    ],
    "keywords": [
      "topological insulator bi2se3",
      "inelastic transport",
      "electron-phonon coupling",
      "fingerprints",
      "temperature dependent transport measurements"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Physical Review Letters",
      "doi": "10.1103/PhysRevLett.112.086601",
      "year": 2014,
      "month": "Feb",
      "volume": 112,
      "number": 8,
      "pages": "086601"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2014PhRvL.112h6601C"
    }
  }
}