{ "id": "1401.7605", "version": "v1", "published": "2014-01-29T17:38:37.000Z", "updated": "2014-01-29T17:38:37.000Z", "title": "Fractional Quantum Hall Effect at $ν=1/2$ in Hole Systems Confined to GaAs Quantum Wells", "authors": [ "Yang Liu", "A. L. Graninger", "S. Hasdemir", "M. Shayegan", "L. N. Pfeiffer", "K. W. West", "K. W. Baldwin", "R. Winkler" ], "journal": "Phys. Rev. Lett. 112, 046804 (2014)", "doi": "10.1103/PhysRevLett.112.046804", "categories": [ "cond-mat.mes-hall", "cond-mat.str-el" ], "abstract": "We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\\nu=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions. The $\\nu=1/2$ FQHE is stable when the charge distribution is symmetric and only in a range of intermediate densities, qualitatively similar to what is seen in two-dimensional electron systems confined to approximately twice wider GaAs quantum wells. Despite the complexity of the hole Landau level structure, originating from the coexistence and mixing of the heavy- and light-hole states, we find the hole $\\nu=1/2$ FQHE to be consistent with a two-component, Halperin-Laughlin ($\\Psi_{331}$) state.", "revisions": [ { "version": "v1", "updated": "2014-01-29T17:38:37.000Z" } ], "analyses": { "subjects": [ "73.43.Fj", "73.21.Fg", "73.43.Nq", "73.43.Qt" ], "keywords": [ "fractional quantum hall effect", "hole systems", "twice wider gaas quantum", "wider gaas quantum wells", "landau level filling factor" ], "tags": [ "journal article" ], "publication": { "publisher": "APS", "journal": "Physical Review Letters", "year": 2014, "month": "Jan", "volume": 112, "number": 4, "pages": "046804" }, "note": { "typesetting": "TeX", "pages": 0, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2014PhRvL.112d6804L" } } }