{ "id": "1312.0379", "version": "v1", "published": "2013-12-02T09:08:08.000Z", "updated": "2013-12-02T09:08:08.000Z", "title": "Topological phase transition and two dimensional topological insulators in Ge-based thin films", "authors": [ "Bahadur Singh", "Hsin Lin", "R. Prasad", "A. Bansil" ], "comment": "7 pages, 5 figures, Accepted for publication in Physical Review B (2012)", "journal": "Phys. Rev. B 88, 195147 (2013)", "doi": "10.1103/PhysRevB.88.195147", "categories": [ "cond-mat.mes-hall" ], "abstract": "We discuss possible topological phase transitions in Ge-based thin films of Ge(Bi$_x$Sb$_{1-x}$)$_2$Te$_4$ as a function of layer thickness and Bi concentration $x$ using the first principles density functional theory framework. The bulk material is a topological insulator at $x$ = 1.0 with a single Dirac cone surface state at the surface Brillouin zone center, whereas it is a trivial insulator at $x$ = 0. Through a systematic examination of the band topologies we predict that thin films of Ge(Bi$_x$Sb$_{1-x}$)$_2$Te$_4$ with $x$ = 0.6, 0.8 and 1.0 are candidates for two-dimensional (2D) topological insulators, which would undergo a 2D topological phase transition as a function of $x$. A topological phase diagram for Ge(Bi$_x$Sb$_{1-x}$)$_2$Te$_4$ thin films is presented to help guide their experimental exploration.", "revisions": [ { "version": "v1", "updated": "2013-12-02T09:08:08.000Z" } ], "analyses": { "subjects": [ "71.20.Nr", "71.10.Pm", "73.20.At" ], "keywords": [ "topological phase transition", "ge-based thin films", "dimensional topological insulators", "principles density functional theory", "dirac cone surface state" ], "tags": [ "journal article" ], "publication": { "publisher": "APS", "journal": "Physical Review B", "year": 2013, "month": "Nov", "volume": 88, "number": 19, "pages": 195147 }, "note": { "typesetting": "TeX", "pages": 7, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2013PhRvB..88s5147S" } } }