{
  "id": "1310.6086",
  "version": "v2",
  "published": "2013-10-23T01:39:48.000Z",
  "updated": "2013-10-26T14:56:07.000Z",
  "title": "Non-Ohmic behavior of carrier transport in highly disordered graphene",
  "authors": [
    "Shun-Tsung Lo",
    "Chiashain Chuang",
    "R. K. Puddy",
    "T. -M. Chen",
    "C. G. Smith",
    "C. -T. Liang"
  ],
  "comment": "Reported by nanotechweb.org. Two references added",
  "doi": "10.1088/0957-4484/24/16/165201",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.dis-nn",
    "cond-mat.mtrl-sci",
    "cond-mat.str-el"
  ],
  "abstract": "We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By apply a high source-drain voltage Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hopping transport occurs. In the activationless-hopping regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small Vsd occurs with the presence of high electric field and perpendicular magnetic field..",
  "revisions": [
    {
      "version": "v2",
      "updated": "2013-10-26T14:56:07.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "highly disordered graphene",
      "carrier transport",
      "non-ohmic behavior",
      "high electric field",
      "high source-drain voltage vsd"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "journal": "Nanotechnology",
      "year": 2013,
      "month": "Apr",
      "volume": 24,
      "number": 16,
      "pages": 165201
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2013Nanot..24p5201L"
    }
  }
}