{
  "id": "1310.4051",
  "version": "v2",
  "published": "2013-10-15T13:48:49.000Z",
  "updated": "2014-01-19T13:39:36.000Z",
  "title": "Localized States and Quantum Spin Hall Effect in Si-Doped InAs/GaSb Quantum Wells",
  "authors": [
    "Dong-Hui Xu",
    "Jin-Hua Gao",
    "Chao-Xing Liu",
    "Jin-Hua Sun",
    "Fu-Chun Zhang",
    "Yi Zhou"
  ],
  "comment": "4+pages main text including 4 figures, supplementary materials with 3 figures are included",
  "journal": "Phys. Rev. B 89, 195104 (2014)",
  "doi": "10.1103/PhysRevB.89.195104",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We study localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. We propose a model describing donor and/or acceptor impurities to describe Si dopants. This model shows in-gap bound states and wide conductance plateau with the quantized value $2e^2/h$ in light dopant concentration, consistent with recent experiments by Du et al. We predict a conductance dip structure due to backward scattering in the region where the localization length $\\xi$ is comparable with the sample width $L_y$ but much smaller than the sample length $L_x$.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2014-01-19T13:39:36.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "72.15.Rn",
      "72.20.-i",
      "73.20.Fz",
      "73.63.Hs"
    ],
    "keywords": [
      "quantum spin hall effect",
      "si-doped inas/gasb quantum wells",
      "localized states",
      "study localized in-gap states",
      "conductance dip structure"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Physical Review B",
      "year": 2014,
      "month": "May",
      "volume": 89,
      "number": 19,
      "pages": 195104
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2014PhRvB..89s5104X"
    }
  }
}