{
  "id": "1308.1191",
  "version": "v4",
  "published": "2013-08-06T06:28:00.000Z",
  "updated": "2014-03-10T00:46:13.000Z",
  "title": "Critical exponent of metal-insulator transition in doped semiconductors: the relevance of the Coulomb interaction",
  "authors": [
    "Yosuke Harashima",
    "Keith Slevin"
  ],
  "comment": "6pages, 4figures",
  "journal": "Phys. Rev. B 89, 205108 (2014)",
  "doi": "10.1103/PhysRevB.89.205108",
  "categories": [
    "cond-mat.dis-nn",
    "cond-mat.str-el"
  ],
  "abstract": "We report a simulation of the metal-insulator transition in a model of a doped semiconductor that treats disorder and interactions on an equal footing. The model is analyzed using density functional theory. From a multi-fractal analysis of the Kohn-Sham eigenfunctions, we find $\\nu \\approx 1.3$ for the critical exponent of the correlation length. This differs from that of Anderson's model of localization and suggests that the Coulomb interaction changes the universality class of the transition.",
  "revisions": [
    {
      "version": "v4",
      "updated": "2014-03-10T00:46:13.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "71.23.An",
      "71.15.Mb",
      "71.30.+h"
    ],
    "keywords": [
      "metal-insulator transition",
      "doped semiconductor",
      "critical exponent",
      "density functional theory",
      "coulomb interaction changes"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Physical Review B",
      "year": 2014,
      "month": "May",
      "volume": 89,
      "number": 20,
      "pages": 205108
    },
    "note": {
      "typesetting": "TeX",
      "pages": 6,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2014PhRvB..89t5108H"
    }
  }
}